○論文リスト（どのような研究をしてきたか、またはどのような研究をしているか、を明らかにするために、今までに発表した主な査読付き論文、国際会議プロシーディングスなどをピックアップして掲載します）)

1. Diffusion Mechanism of Nickel and Point Defects in Silicon
   H. Kitagawa, K. Hashimoto and M. Yoshida, Jpn. J. Appl. Phys. 21 (1982) 276.

2. Point Defects in Silicon Studied by Nickel Diffusion
   H. Kitagawa, K. Hashimoto and M. Yoshida, Physica B+C 116 (1983) 323.

3. Energy Levels of Electrically Active Cobalt in Silicon
   H. Kitagawa, H. Nakashima and K. Hashimoto, Memoirs of the Facalty of Engineering, Kyushu University, 46 (1986) 119.

4. Amphoteric Properties of Electrically Active Nickel in Silicon
   H. Kitagawa and H. Nakashima, Jpn. J. Appl. Phys. 28 (1989) 305.
5. Electrical Properties of Nickel in Silicon
   H. Kitagawa, S. Tanaka, H. Nakashima and M. Yoshida, J. Electronic Mater. 20 (1991) 441.

6. Iron-Related Levels in N-Type Silicon Studied by Hall Effect and DLTS Measurement
   H. Kitagawa, L. C. Kimerling and S. Tanaka, J. Electronic Mater. 21 (1992) 863.

7.In-Diffusion and Isothermal Annealing of Iron-Related Defects in Czochralski N-Type Silicon
   S. Tanaka and H. Kitagawa, Jpn. J. Appl. Phys. 37 (1998) L4.

8. Dissociative Diffusion of Nickel in Silicon, and Sinks and Sources of Vacancy Annihilation and Generation in the Crystal Bulk
   H. Kitagawa, K. Hashimoto and M. Yoshida, Jpn. J. Appl. Phys. 21 (1982) 276.

9. Diffusion and Electrical Properties of 3d Transition Metal Impurities in Silicon
   H. Kitagawa, Solid State Phenomena 71 (2000) 51.

10. Diffusion and Electrical Properties of Nickel in Silicon
   S. Tanaka, T. Ikari and H. Kitagawa, Defect and Diffusion Forum Vols. 183-185 (2000) 171.

11. In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon
   S. Tanaka, T. Ikari and H. Kitagawa, Jpn. J. Appl. Phys. 40 (2001) 3063.

12. Distribution of Substitutional Nickel Atoms in Dislocation-Free Silicon Studied by Deep Level Trasient Spectroscopy and Theoretical Analyses Based on the Dissociative Mechanism of Diffusion
   S. Tanaka, T. Ikari and H. Kitagawa, Jpn. J. Appl. Phys. 41 (2002) 6305.